unisonic technologies co., ltd 2sc4027 npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2012 unisonic technologies co., ltd qw-r209-018.c high-voltage switching applications ? features * high voltage and large current capacity. * fast switching time. 1 to-252 to-220 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2SC4027L-X-TA3-T 2sc4027g-x-ta3-t to-220 b c e tube 2sc4027l-x-tn3-r 2sc4027g-x-tn3-r to-252 b c e tape reel
2sc4027 npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r209-018.c ? absolute maximum rating (t a =25c, unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 180 v collector to emitter voltage v ceo 160 v emitter to base voltage v ebo 6 v collector current i c 1.5 a collector current (pulse) i cp 2.5 a collector dissipation t a =25c to-220 p c 2 w to-252 1 t c =25c to-220 65 w to-252 15 junction temperature t j 150 c storage temperature t stg -55 ~+150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =10a, i e =0 180 v collector-emitter breakdown voltage bv ceo i c =1ma, r be = 160 v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 6 v collector-emitter satu ration voltage v ce ( sat ) i c =500ma, i b =50ma 0.13 0.45 v base-emitter satura tion voltage v be ( sat ) i c =500ma, i b =50ma 0.85 1.2 v collector cutoff current i cbo v cb =120v, i e =0 1.0 a emitter cutoff current i ebo v eb =4v, i i c =0 1.0 a dc current gain h fe1 v ce =5v, i c =100ma 100 400 h fe2 v ce =5v, i c =10ma 80 gain-bandwidth product f t v ce =10v, i c =50ma 120 mhz output capacitance c ob v cb =-10v, f=1mhz 12 pf turn-on time t on see specified test circuit 60 s storage time t stg 1.2 s fall time t f 80 s ? classification of h fe1 rank r s t range 100~200 140~280 200~400
2sc4027 npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r209-018.c ? switching time test circuit i b1 i b2 vr 50 ? input output -5v 100v + + r b 10i b1 = -10i b2 =ic=0.7a pw=20s d.c. 1% 470f 100f r l 14k ?
2sc4027 npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r209-018.c ? typical characteristics 02 1.4 collector current vs. collector to emitter voltage collector current, ic (a) 134 1.6 1.8 5 collector to emitter voltage, v ce (v) 5 0 m a 4 0 m a 3 0 m a 2 0 m a 1 0 m a 5 m a 2 m a 1ma i b =0 1.2 1.0 0.8 0.6 0.4 0.2 0 020 0.8 collector current vs. collector to emitter voltage collector current, ic (a) 10 30 40 1.0 50 collector to emitter voltage, v ce (v) 5 . 0 m a 4.0ma 3 . 5 m a 3 . 0 m a 2.5ma 0.5ma 0.6 0.4 0.2 0 4.5ma 2.0ma 1.5ma 1.0ma i b =0 00.4 collector current vs. base to emitter voltage collector current, ic (a) 0.2 0.6 0.8 1.6 1.2 base to emitte r voltage, v be (v) 1.2 0.8 0.4 0 v ce =5v t a =75c t a =25c t a =-25c dc current vs. collector current dc current gain, h fe 1000 collector current, ic (a) 100 10 v ce =5v - 2 5 c 2 5 c 0.01 0.1 1.0 1.0 t a = 7 5 c gain bandwidth product vs. collector current gain bandwidth product, f t (mhz) collector current, ic (a) 100 10 v ce =10v 0.01 0.1 1.0 1.0 output capacitance vs. collector to base voltage output capacitance, c ob (pf) 100 100 collector to base voltage, v cb (v) 10 f=1mhz 10
2sc4027 npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r209-018.c ? typical characteristics(cont.) collector to emitter saturation voltage vs. collector current collector to emitter saturation voltage, v ce(sat) (v) 1000 collector current, ic (a) 100 0.1 t a =75c t a =25c t a =-25c ic/i b =10 0.01 1.0 collector to emitter saturation voltage vs. collector current collector to emitter saturation voltage, v ce(sat) (v) 10 collector current, ic (a) 1.0 75c t a =-25c 25c ic/i b =10 0.1 0.01 1.0 collector current vs. collector to emitter voltage collector current, ic (a) collector to emitter voltage, v ce (v) 0.1 10 100 i cp =2.5a i c =1.5a one pulse tc =25c d c o p e r a t i o n ( t a = 2 5 c ) d c oper at ion ( t a =25 c ) 1 m s 1 0 m s 1 0 0 m s 040 collector dissipation vs. ambient temperature collector dissipation, pc (w) 20 80 100 16 160 ambient temperature, t a (c) 12 4 0 no heat sink 14 10 8 6 2 60 120 140 1.0 0.01 1.0 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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